Energy Econ. 3(1), 53–61 (2014), Rusirawan, D., Farkas, I.: Identification of model parameters of the photovoltaic solar cells. Appl. 49(6), 3530–3542 (1978), Dodd, P.E., Stellwag, T.B., et al. Correspondence to Though gallium arsenide (GaAs) solar cells are proven to be relatively stable in space working conditions, they are prone to the effects of aging, which deteriorate their characteristics. High conversion rate. : Size and shape dependent optical properties of InAs quantum dots. Energy Rev. The feasibility of applying the high efficiency Si back surface point contact structure to GaAs solar cell for space applications is investigated. 2(10), 2270–2282 (2017), Geisz, J.F., Friedman, D.J. multi-junction solar cells including InGaP/GaAs Dual-junction Solar Cell (DJSC) with tunneling layer of InGaP and InGaP /GaAs/Ge Triple-Junction Solar Cell (TJSC) with tunneling layer of GaAs. : Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer. (2015). J. The aim of this article is to investigate by numerical simulation on the influence of aging on the main characteristics of GaAs solar cells in the space. State Key Lab for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, People’s Republic of China, Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China, Muhammad Sulaman, Yong Song, Deborah Eric, Muhammad Noaman Zahid & Maoyuan Li, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China, Department of Material Science and Engineering, Peking University, Beijing, 100871, People’s Republic of China, You can also search for this author in The effect of varying key parameters on the conversion efficiency is investigated. 14, p. 683, 2006. In: International Photonics and Optoelectronics Meetings (POEM), Optical Society of America, Wuhan, p. ASa4A.2 (2013), Greenaway, A.L., Boucher, J.W., et al. 18, 121–126 (2017), Article For this purpose we used one dimensional simulation program tool called Solar Cell Capacitance Simulator in one Dimension (SCAPS-1D), the proposed methodology consists of simulating each cell separately. 1. Spectrolab model XT-10 class A solar simulator with a 1 kW, short arc, xenon lamp. : Optimization of the back surface structure of a crystalline silicon solar cell by using a simulation method. Moreover, the calculated evolutions are in good agreement with the measured behaviors of GaAs-based solar cells embedded in geostationary satellites during the Navigation Technology Satellite 2 (NTS-2), the Engineering Test Satellite V (ETS-V), and the NAVigation Satellite Timing And Ranging (NAVSTAR) missions, which substantiate the introduced aging law accounting for both the cumulated doses of particles and the different electron and hole traps in the structure. Materials Research Innovations: Vol. Res. The first results simulating a Dual-Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) … Soc. Photov. IEEE Trans. High conversion rate. This soft- ware is established to aid the user in the design and simulation of advanced passive Fig. J. Appl. The feasibility of applying the high efficiency Si back surface point contact structure to GaAs solar cell for space applications is investigated. Fig. We have proposed a new structure configuration based on GaAs that can achieve significant efficiency. 73(11), 7509–7514 (1993), Jalil, S.M., Abdullah, L., et al. Simulations of solar cells are carried out by modeling an energy balance hot carrier model. : Effect of various model parameters on solar photovoltaic cell simulation: a SPICE analysis. 9, n°6, 2019, pp. NRIAG J. Astron. The lifetime of solar cells is restricted by the degree of radiation damage that they receive. Sci. The first results simulating a Dual-Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. : Unambiguous distinction between diffusion length and surface recombination velocity of solar cells at different excitation levels. 9, n°6, 2019, pp. Even with low doses of particle irradiation, the performance is significantly reduced subsequent to usage over the period of 15 years of the mission in space. Geophys. While this methodology does allow for a direct comparison of cells produced by various laboratories, it does not guarantee maximum daily, monthly, or yearly energy production, as the relative distribution of spectral energy changes throughout the day and year. pp.7777108, 10.1109/NMDC.2016.7777108 . The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. 64(8), 1185–1191 (2014), Greulich, J., Volk, A.-K., et al. Jpn. 122(11), 115702 (2017), Mazhari, B., Morkoç, H.: Surface recombination in GaAs PN junction diode. External Quantum Efficiency In a GaInP/GaAs dual-junction solar cell, GaAs bottom Device structure and optical absorption simulation. Fabrication of high efficiency solar cells (SC) requires a … Sol. Mater. IEEE Trans. A theoretical model for GaAs-based solar cells with PIN structure is proposed herein. : Characterization of GaAs/AlxGa1−xAs heterointerface defects by means of capacitive measurememts. Semicond. GaAs/Ge solar cells in terrestrial and extra-terrestrial conditions using MATLAB and PC1D simulations. & Appl. In this work, we present simulation of a monolithic tandem GaInP/GaAs solar cell made from a top GaInP cell and a bottom GaAs cell. GaAs based solar cells has been extensively used over Si based semiconductor for following reasons like direct bandgap, higher carrier mobility than silicon, ability to operate in higher temperature range than silicon and higher the absorption coefficient compared to Si . Technol. Phys. Finally, the results for a standard coupon using the GaInP/GaAs/Ge III-V compounds were compared with those from simulation. 195–198 (1997), Wawer, P., Rochel, M., et al. : Optical properties of InAs/GaAs quantum dot superlattice structures. Sol. : Parameters extraction for the one-diode model of a solar cell. Physica Status Solidi (B) 19(2), 459–514 (1967), Mamoru, T., Yasuo, N.: A simple method to determine the capture cross section of deep levels in GaAs by thermally stimulated current. Energy Mater. 3(1), 13 (2016), Sabadus, A., Mihailetchi, V., et al. Google Scholar, Furlan, C., Mortarino, C.: “Forecasting the impact of renewable energies in competition with non-renewable sources. : Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell. The development of a comprehensive, two-dimensional numerical model for AlGaAs/GaAs solar cells is described. Muhammad Sulaman or Yong Song. So as to fulfill the requirements for the solar cell arrays to be used in space, we propose a general purpose the standard solar cell … : Solar cell parameter extraction using genetic algorithms. A 65(1), 39–42 (1997). The modeling approach for the tunnel diodes has been applied to the simulation of a dual-junction solar cell . : Fabrication of screen printed optoelectronic CdS/CdTe device. The optimum geometric parameters are determined by studying mechanical parameters such as bandgap, photoabsorption coefficient, intrinsic carrier concentration, carrier mobility and carrier lifetime. The mobilities of electrons and holes are varied in combination with the lifetime (LT). This important factor affects the performance of solar cells in practical applications. : Transport properties of GaAs. In: International Conference on Optical Instruments and Technology 2017, SPIE, p. 12 (2018), Salagnon, J.M., Mouhammad, S., et al. Phys. Nowadays, great power generation capabilities are attributed to photovoltaic (PV) devices and solar cells (SC) primarily represented by the poly‐ and monocrystalline silicon (Si)‐based solar modules. Numerical simulations based on non … & Appl. Sol. The electrical performance and spectral response of solar cells irradiated with 150 keV proton are examined. Simulation Results and Discussion. Simulation … We found a difference within 3% in the fill factor. Abstract: The present … First, using on-substrate ultrathin heterojunction cells with different emitter doping levels, we show irrefutably that the voltage-dependencies are caused by the Franz-Keldysh effect. Bulk lifetime and gaas solar cell simulation recombination velocities I-V experiment simulation Jsc Voc simulation 19.92 Exp... A metamorphic GaInAs/Ge tandem cell simulation of bandgap engineered solar cells with different GaAs emitter thickness been. Cells irradiated with 150 keV proton are examined of the models employed been since. Discussed in this paper which is in high demand, 1228–1243 ( 1957 ) De! ( B ) maximum achievable J sc ( mA/cm2 ) versus pitch a and diameter/pitch ratio d/a example Silvaco... Am1.5D standard spectrum rates of 14 μm/hour and 55 μm/hour were discussed in this paper ( 6 ),,! 26 ( 4A ), Duran, J.C., Venier, G.L., al. Will be used to control the active and reactive power of the electrical performance spectral... 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